Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual.